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| Green Product STU/D434S Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 40V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. ID 50A RDS(ON) (m) Max 9.2 @ VGS=10V 11.5 @ VGS=4.5V G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 40 20 TC=25C TC=70C 50 40 147 91 TC=25C TC=70C 42 27 -55 to 150 Units V V A A A mJ W W C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a 3 50 C/W C/W Details are subject to change without notice. Nov,14,2008 1 www.samhop.com.tw STU/D434S Ver 1.0 ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units V 1 100 uA nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=32V , VGS=0V 40 VGS= 20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=25A VGS=4.5V , ID=20A VDS=10V , ID=25A 1.3 1.7 7.6 8.8 18 3 9.2 11.5 V m ohm m ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr tD(OFF) tf Qg Qgs Qgd Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=20V,VGS=0V f=1.0MHz 1160 211 135 VDD=20V ID=1A VGS=10V RGEN=3.3 ohm VDS=20V,ID=25A,VGS=10V VDS=20V,ID=25A,VGS=4.5V VDS=20V,ID=25A, VGS=10V 17 24 59 11 20 10 2.1 5 ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Diode Forward Voltage b 10 0.84 1.3 A V VGS=0V,IS=10A Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25C,L=0.5mH,VDD = 20V.(See Figure13) Nov,14,2008 2 www.samhop.com.tw STU/D434S Ver 1.0 100 V G S =10V V G S =4V V G S =3.5V 60 80 60 ID, Drain Current(A) ID, Drain Current(A) 48 36 -55 C 24 T j=125 C 12 0 25 C 40 V G S =3V 20 V G S =2.5V 0 0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2 VDS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 20 Figure 2. Transfer Characteristics 2.0 16 RDS(on), On-Resistance Normalized 1.8 1.6 1.4 1.2 1.0 0 VGS=10V ID=25A RDS(on)(m ) 12 VGS=4.5V 8 VGS=10V 4 VGS=4.5V ID=20A 1 1 20 40 60 80 100 0 25 50 75 100 125 ID, Drain Current(A) Tj, Junction Temperature( C ) 150 T j ( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.40 ID=250uA 1.30 1.20 1.10 1.00 0.90 0.80 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Nov,14,2008 3 www.samhop.com.tw STU/D434S Ver 1.0 30 25 20 60 Is, Source-drain current(A) ID=25A 20 125 C 25 C RDS(on)(m ) 125 C 15 10 75 C 5 0 25 C 10 0 2 4 6 8 10 1 0 0.24 0.48 0.72 0.96 1.20 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1800 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 8 6 4 2 0 0 3 6 9 12 18 21 24 27 Qg, Total Gate Charge(nC) VGS, Gate to Source Voltage(V) 1500 C, Capacitance(pF) Ciss 1200 900 600 Coss 300 VDS=20V ID=25A Crss 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage(V) Figure 9. Capacitance Figure 10. Gate Charge 1000 500 ID, Drain Current(A) Switching Time(ns) 100 TD(off) Tr Tf 100 (O L N) im it 1m 10 m DC s 10 0u s TD(on) R DS s 10 10 VGS =10V S ingle P ulse T A=25 C 1 1 1 VDS=20V,ID=1A VGS=10V 3 10 100 1 0.1 10 40 100 Rg, Gate Resistance() VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Nov,14,2008 4 www.samhop.com.tw STU/D434S Ver 1.0 15V V ( BR )D S S tp VDS L D R IVE R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit Figure 13a. Unclamped Inductive Waveforms Figure 13b. 2 1 D=0.5 Normalized Transient Thermal Resistance 0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 t2 1. 2. 3. 4. 10 10 10 R J A (t)=r (t) * R J A R J A=S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 1 10 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Nov,14,2008 5 www.samhop.com.tw STU/D434S Ver 1.0 PACKAGE OUTLINE DIMENSIONS TO-251 Nov,14,2008 6 www.samhop.com.tw STU/D434S Ver 1.0 E b2 L3 1 D1 E1 D A C TO-252 H 1 L4 b1 e 2 3 DETAIL "A" b L2 L L1 A1 DETAIL "A" INCHES MIN 0.086 0.000 0.025 0.026 0.205 0.018 0.235 0.213 0.252 0.193 0.090 0.378 0.052 0.105 0.018 0.035 0.020 0 7 MAX 0.094 0.005 0.035 0.043 0.215 0.023 0.245 0.217 0.265 0.197 BSC 0.405 0.065 0.125 0.022 0.045 0.040 8 REF. SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.184 0.000 0.633 0.666 5.207 0.460 5.969 5.415 6.400 4.902 2.286 9.601 1.313 2.666 0.460 0.889 0.508 0 7 MAX 2.388 0.127 0.889 1.092 5.461 0.584 6.223 5.515 6.731 5.004 BSC 10.286 1.651 3.174 0.560 1.143 1.016 8 REF. Nov,14,2008 7 www.samhop.com.tw STU/D434S Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 540 + 1.5 2~ 3.0 4.5 5.25 1.65 1.4 2.25 6.60 0.4 7.50 1.25 1.90 " A" 5.5 19.75 TO-252 Carrier Tape T D1 P2 P1 E1 E2 E B0 K0 UNIT: PACKAGE TO-252 (16 A0 6.96 0.1 A0 FEED DIRECTION D0 P0 B0 10.49 0.1 K0 2.79 0.1 D0 2 D1 1.5 + 0.1 -0 E 16.0 0.3 E1 1.75 0.1 E2 7.5 0.15 P0 8.0 0.1 P1 4.0 0.1 P2 2.0 0.15 T 0.3 0.05 TO-252 Reel T S V R M N G H W UNIT: TAPE SIZE 16 REEL SIZE 330 M 330 0.5 N 97 1.0 W 17.0 + 1.5 -0 T 2.2 H 13.0 + 0.5 - 0.2 K 10.6 S 2.0 0.5 G R K V Nov,14,2008 8 www.samhop.com.tw |
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